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strong ir fet? IRFB7730PBF irfs7730pbf irfsl7730pbf 1 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 hexfet ? power mosfet d s g application ? ? brushed motor drive applications ? ? bldc motor drive applications ?? battery powered circuits ? ? half-bridge and full-bridge topologies ? ? synchronous rectifier applications ? ? resonant mode power supplies ? ? or-ing and redundant power switches ? ? dc/dc and ac/dc converters ? ? dc/ac inverters benefits ? ? improved gate, avalanche and dynamic dv/dt ruggedness ? ? fully characterized capacitance and avalanche soa ? ? enhanced body diode dv/dt and di/dt capability ? ? lead-free, rohs compliant v dss 75v r ds(on) typ. 2.2m ? ? max 2.6m ? ? i d (silicon limited) 246a ? i d (package limited) 195a ? fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature to-220ab IRFB7730PBF d2pak irfs7730pbf to-262 irfsl7730pbf s d g s d g s d g d g d s gate drain source base part number package type standard pack orderable part number form quantity IRFB7730PBF to-220 tube 50 IRFB7730PBF irfsl7730pbf to-262 tube 50 irfsl7730pbf irfs7730pbf d 2 -pak tube 50 irfs7730pbf tape and reel left 800 irfs7730trlpbf 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 2 4 6 8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 100a t j = 25c t j = 125c 25 50 75 100 125 150 175 t c , case temperature (c) 0 50 100 150 200 250 i d , d r a i n c u r r e n t ( a ) limited by package downloaded from: http:///
? irfb/s/sl7730pbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 246 ? a i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 174 i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 195 i dm pulsed drain current ?? 984* ? p d @t c = 25c maximum power dissipation 375 w linear derating factor 2.5 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) ? avalanche characteristics ? symbol parameter max. units e as (thermally limited) single pulse avalanche energy ?? 465 e as (thermally limited) single pulse avalanche energy ?? 898 i ar avalanche current ? see fig 15, 16, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? CCC 0.40 c/w ? r ? cs case-to-sink, flat greased surface 0.50 CCC r ? ja junction-to-ambient (to-220) ? CCC 62 r ? ja junction-to-ambient (pcb mount) (d 2 pak) ? CCC 40 mj ? static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 75 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 40 CCC mv/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance CCC 2.2 2.6 m ?? v gs = 10v, i d = 100a ? v gs(th) gate threshold voltage 2.1 CCC 3.7 v v ds = v gs , i d = 250a i dss drain-to-source leakage current CCC CCC 1.0 a v ds = 75 v, v gs = 0v CCC CCC 150 v ds = 75v,v gs = 0v,t j = 125c i gss gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v r g gate resistance CCC 2.1 CCC ?? CCC 2.6 CCC ? v gs = 6.0v, i d = 50a ? notes: ?? calculated continuous current based on maximum allowable ju nction temperature. bond wire current limit is 195a by source bonding technology. note that current limit ations arising from heating of the device leads may occur with some lead mounting arrangements. (refer to an-1140) ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 93h, r g = 50 ? , i as = 100a, v gs =10v. ?? i sd ? 100a, di/dt ? 1626a/s, v dd ? v (br)dss , t j ?? 175c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 42a, v gs =10v. ? when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994 : http://www.irf.com /technical-info/ appnotes/an-994.pdf * pulse drain current is limited at 780a by source bonding technology. downloaded from: http:///
? irfb/s/sl7730pbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 249 CCC CCC s v ds = 10v, i d =100a q g total gate charge CCC 271 407 i d = 100a q gs gate-to-source charge CCC 55 CCC v ds = 38v q gd gate-to-drain charge CCC 79 CCC v gs = 10v q sync total gate charge sync. (qgC qgd) CCC 192 CCC t d(on) turn-on delay time CCC 21 CCC ns v dd = 38v t r rise time CCC 120 CCC i d = 100a t d(off) turn-off delay time CCC 180 CCC r g = 2.7 ?? t f fall time CCC 115 CCC v gs = 10v ? c iss input capacitance CCC 13660 CCC pf ? v gs = 0v c oss output capacitance CCC 1120 CCC v ds = 25v c rss reverse transfer capacitance CCC 690 CCC ? = 1.0mhz, see fig.7 c oss eff.(er) effective output capacitance (energy related) CCC 1060 CCC v gs = 0v, vds = 0v to 60v ? c oss eff.(tr) output capacitance (time related) CCC 1275 CCC v gs = 0v, vds = 0v to 60v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current CCC CCC 246 ? a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 984* ? integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage CCC CCC 1.2 v t j = 25c,i s = 100a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ? CCC 16 CCC v/ns t j = 175c,i s =100a,v ds = 75v ? t rr reverse recovery time CCC 44 CCC ns t j = 25c v dd = 64v CCC 51 CCC t j = 125c i f = 100a, q rr reverse recovery charge CCC 70 CCC nc t j = 25c di/dt = 100a/s ??? CCC 97 CCC t j = 125c ? i rrm reverse recovery current CCC 2.6 CCC a t j = 25c ? nc ? d s g downloaded from: http:///
? irfb/s/sl7730pbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 7. typical capacitance vs. drain-to-source voltage 0 50 100 150 200 250 300 350 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 60v v ds = 38v v ds = 15v i d = 100a fig 8. typical gate charge vs. gate-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 2.0 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.4 0.8 1.2 1.6 2.0 2.4 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 100a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 1000000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss downloaded from: http:///
? irfb/s/sl7730pbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 0.1 1 10 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc limited by package fig 10. maximum safe operating area -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 75 80 85 90 95 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma fig 11. drain-to-source breakdown voltage 0 20 40 60 80 100 120 140 160 180 200 i d , drain current (a) 2.0 2.2 2.4 2.6 2.8 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 5.5v vgs = 6.0v vgs = 7.0v vgs = 8.0v vgs = 10v fig 13. typical on-resista nce vs. drain current fig 9. typical source-drain diode forward voltage 0.2 0.6 1.0 1.4 1.8 2.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -10 0 10 20 30 40 50 60 70 80 v ds, drain-to-source voltage (v) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 e n e r g y ( j ) fig 12. typical c oss stored energy downloaded from: http:///
? irfb/s/sl7730pbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart = 25c (single pulse) fig 14. maximum effective transient thermal impedance, junction-to-case fig 16. maximum avalanche energy vs. temperature 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 100a fig 15. avalanche current vs. pulse width notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? downloaded from: http:///
? irfb/s/sl7730pbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 0 200 400 600 800 1000 di f /dt (a/s) 0 5 10 15 20 i r r m ( a ) i f = 100a v r = 64v t j = 25c t j = 125c fig 17. threshold voltage vs. temperature fig 21. typical stored charge vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 100 200 300 400 500 q r r ( n c ) i f = 60a v r = 64v t j = 25c t j = 125c fig 18. typical recovery current vs. dif/dt fig 20. typical stored charge vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 100 200 300 400 500 q r r ( n c ) i f = 100a v r = 64v t j = 25c t j = 125c fig 19. typical recovery current vs. dif/dt -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/s) 0 5 10 15 20 i r r m ( a ) i f = 60a v r = 64v t j = 25c t j = 125c downloaded from: http:///
? irfb/s/sl7730pbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ? downloaded from: http:///
? irfb/s/sl7730pbf 9 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 to-220ab package outline (dimensions are shown in millimeters (inches)) to-220ab part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ in t e r n a t io n a l part number r e c t if ie r lo t c o d e assem bly lo g o year 0 = 2000 date code w eek 19 lin e c lot code 1789 e x a m p l e : t h is is a n ir f 1 0 1 0 n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead - free" in th e assem bly lin e "c " assem bled o n w w 19, 2000 to-220ab packages are not recommended for surface mount application . downloaded from: http:///
? irfb/s/sl7730pbf 10 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 to-262 package outline (dimensions are shown in millimeters (inches) to-262 part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ logo rectifier international lot code assembly logo rectifier international date code w eek 19 year 7 = 1997 part number a = assembly site code or product ( opti onal) p = designates lead- free example: this is an irl3103l lot code 1789 assembly part number date code w eek 19 line c lot code year 7 = 1997 assembled on w w 19, 1997 in the assembly line "c" downloaded from: http:///
? irfb/s/sl7730pbf 11 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 d 2 pak (to-263ab) package outline (dimensions are shown in millimeters (inches)) d 2 pak (to-263ab) part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ date code year 0 = 2000 week 02 a = assembly site code rectifier international part number p = designates lead - free product (optional) f530s in the assembly line "l" assembled on ww 02, 2000 this is an irf530s with lot code 8024 international logo rectifier lot code assembly year 0 = 2000 part number date code line l week 02 or f530s logo assembly lot code downloaded from: http:///
? irfb/s/sl7730pbf 12 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7, 2014 ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. d 2 pak (to-263ab) tape & reel information (dimensions are shown in millimeters (inches)) qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? moisture sensitivity level to-220 n/a rohs compliant yes d 2 pak msl1 to-262 n/a note: for the most current drawing please refer to ir website at http://www.irf.com/package/ ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comments 11/7/2014 ?? updated e as (l =1mh) = 898mj on page 2 ?? updated note 9 limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 42a, v gs =10v on page 2 ?? updated package outline on page 9,10,11. downloaded from: http:///

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